TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• method to form an undercut structure that guarantees a clean lift-off procedure. The second approach used dry etching with an Ar beam to etch a thin Py film, while an electron-beam-patterned negative resist mask kept the desired structure. In the third process, nanostencils (shadow masks) with

• mode to avoid melting of the PMMA resist. The second approach involved etching a thin Py film with an ion beam while preserving the intended structure with an electron-beam-patterned negative resist mask. Redeposition of etched material was found to construct fences at the edges of the structures

• establish a good thermal contact during metal deposition to prevent the resist mask from melting as the substrate temperature is above the glass transition temperature of the resist. Ion beam etching The IBE process (Figure 6) is as follows: The first step is to deposit Py on the substrate; then a negative

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• PMMA, it has a much higher mechanical toughness, thermal resistance, chemical stability, and as PMMA, it is widely used in optical applications. A range of publications show that, owing to its radiation susceptibility, PC can be used as a positive or negative resist for electron beam lithography [15

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• higher resist sensitivity, reduced proximity effect and small spot size [15]. Upon ion beam exposure, chain scission occurs leaving the exposed region soluble in a suitable developer. Very high ion doses also break short side chains that later cross-link, allowing PMMA to be also used as a negative

• resist [31]. Chain scission leads to volume loss through the release of gas molecules, and this leads to the shrinkage of exposed PMMA [32], which can be easily quantified using AFM. In a second experiment, we tested the effect on a PMMA thin film exposed to different doses under the focused He ion beam

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls

• Carlos Angulo Barrios and
• Víctor Canalejas-Tejero

Beilstein J. Nanotechnol. 2017, 8, 1231–1237, doi:10.3762/bjnano.8.124

• fabrication sequence of an array of closed nanocages (hollow nanopillars) made of thin-walled Al. First, an array of SU-8 negative resist nanopillars are created by electron-beam lithography (EBL) on an Al-coated Si substrate (Figure 1a). The SU-8 nanopillars exhibit a smooth surface with rounded top edges

• , nanofluidic systems, nanobiosensors and nanophotonic structures. Besides, the presented approach is amenable to be produced by large area, high throughput lithography techniques, which increases its industrial potential. Experimental Hollow nanocage array fabrication First, a negative resist SU-8 2000.5

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• . Depending on the exposure dose, PMMA can act as a positive or negative resist [9][10]. PMMA’s dual-tone resist capability opens up a simple and inexpensive route to produce a range of polymer nanostructures using direct overexposure of the electron beam [11][12][13][14][15]. In this paper we report on the

• the formation of the ring is the overexposure of the resist at the irradiation point followed by its carbonization [11][13]. Thus, the overexposed, positive resist acts as a negative resist. The distribution of electrons in a resist due to forward and back scattering is Gaussian in nature. This means

Nanoscale patterning of a self-assembled monolayer by modification of the molecule–substrate bond

• Cai Shen and
• Manfred Buck

Beilstein J. Nanotechnol. 2014, 5, 258–267, doi:10.3762/bjnano.5.28

• followed by adsorption of AdSH. The appearance of Au adatom islands upon the thiol exchange suggests that the interfacial structures of BP2 and AdSH SAMs are different. Keywords: copper; electrodeposition; gold adatoms; nanolithography; negative resist; Introduction The applications of organic adsorbates

• -controlled reductive desorption of the thiol in areas that are not modified by Cu-UPD followed by the adsorption of a second thiol. As such it is a negative resist technique and, thus, complementary to other lithography based schemes such as grafting [35], in which the replacement takes place in the written

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

• Adrian Iovan,
• Marco Fischer,
• Roberto Lo Conte and
• Vladislav Korenivski

Beilstein J. Nanotechnol. 2012, 3, 884–892, doi:10.3762/bjnano.3.98

• 40 nm thick SiO2 layer for insulation, rotating the sample holder during deposition. Finally, the resist was lifted off, and the last step of lithography was the use of negative resist and deposition of a 200 nm thick Al top electrode. Transport measurements: The current–voltage (I–V) characteristics

Controlled positioning of nanoparticles on a micrometer scale

• Fabian Enderle,
• Oliver Dubbers,
• Alfred Plettl and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 773–777, doi:10.3762/bjnano.3.86

• interparticle distance was fixed at an average value of 102 ± 3 nm, for reasons to be discussed further below. Selecting Au nanoparticles on the micrometer scale The basic idea behind selecting individual Au NPs on the micrometer scale is outlined by the schematics presented in Figure 2. A negative resist (AR

• negative resist for electron-beam lithography (EBL); (3) Resist disks arranged in a square lattice as obtained after EBL; (4) Removal of the residual Au NP between the disks by I/KI solution; (5) Stripping of the resist delivers the final NP arrangement; (6) Optional; using the NP as masks for a subsequent

Mapping mechanical properties of organic thin films by force-modulation microscopy in aqueous media

• Jianming Zhang,
• Zehra Parlak,
• Carleen M. Bowers,
• Terrence Oas and
• Stefan Zauscher

Beilstein J. Nanotechnol. 2012, 3, 464–474, doi:10.3762/bjnano.3.53

• concentration generates low-grafting-density patterns. (c) Residual negative resist is stripped off by solvent washing. (d) Newly exposed gold surface is covered by high-grafting-density EG3 thiol by backfilling. (e) Overnight exposure to EG3 solution equilibrates the patterned-thiol SAM to a uniform surface

Electron-beam patterned self-assembled monolayers as templates for Cu electrodeposition and lift-off

• Zhe She,
• Andrea DiFalco,
• Georg Hähner and
• Manfred Buck

Beilstein J. Nanotechnol. 2012, 3, 101–113, doi:10.3762/bjnano.3.11

• ) adsorbed on polycrystalline gold substrates served as templates to control electrochemical deposition of Cu structures from acidic solution, and enabled the subsequent lift-off of the metal structures by attachment to epoxy glue. By exploiting the negative-resist behaviour of MBP0, the SAM was patterned by

• control electrodeposition and adhesion of a deposit precisely, whereas an aromatic negative-resist SAM does not have this problem. Therefore, for the scheme outlined in Figure 1a, a negative-resist behaviour employing aromatic SAMs is preferred. As illustrated in Figure 1b the effect of electron

• patterned SAM, Z0 becomes a function of the exposed topology. For aromatic SAMs, such as MBP0, which exhibit negative-resist behaviour, the density of nucleation sites Z0 is determined by the extent of cross-linking of the molecules. While the exact relationship between the defect size in the SAM and the